(Ticker) – STMicroelectronicsa global semiconductor leader with customers across all electronics application industries, e Soiteca French company active in the design and production of innovative semiconductor materials, have announced a new phase of their collaboration on SiC (silicon carbide) substrateswhich expects ST to qualify Soitec’s SiC substrate technology over the next 18 months.
The goal is ST’s adoption of Soitec’s SmartSiC technology for future production of 200 mm substrates that will feed its device and module manufacturing businesses, with volume production expected in the medium term.
“Moving to 200mm SiC wafers will bring substantial benefits to our customers in the automotive and industrial sectors, as they accelerate the transition to electrification of their systems and products. It is important to drive economies of scale and accompany product volume expansion,” he said Marco MontiPresident Automotive and Discrete Group of STMicroelectronics.
“We chose a vertically integrated model to maximize our know-how in the entire production chain, from high-quality substrates to large-scale front-end and back-end production – he added – The goal of the technological collaboration with Soitec is to continue to improve the yields and quality of our production” .